PART |
Description |
Maker |
EIA1718A-2P |
17.3-18.1GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIB1718A-1P |
17.3-18.1GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
D2221UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB SEME-LAB[Seme LAB]
|
D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS) Triacs Silicon Bidirectional Thyristors 600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
KB8825 |
1.1GHZ DUAL PLL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KH104 |
DC to 1.1GHz Linear Amplifier
|
Cadeka
|
MB511 |
1GHz HIGH SPEED PRESCALER
|
FUJITSU
|
MC12022A MC12022B MC12022BP MC12022AD MC12022AP MC |
1.1GHz Dual Modulus Prescaler
|
MOTOROLA[Motorola, Inc]
|